Adopting efficient N-type TOPcon cell slicing technology, the module conversion efficiency reaches 22.64%. TOPCon cells naturally have no photo induced attenuation (LlD); Passivation contact cell technology enables the product to have a better temperature coefficient and higher power generation compared to conventional components in working conditions; Multi density main gate technology, better light utilization and current collection ability, effectively improving product power output and reliability, Better weak light response enables the production have higher power output compared to conventional com-ponents under low light conditions such as haze and cloudy days.
Standard Module(N-TOPCon)
Product Type | CS-SM-T570-590 |
Maximum Power [W] | 570-590 |
Open Circuit Voltage [V] | 51.99-52.63 |
Short Circuit Current [A] | 13.89-14.13 |
Maximum Power Point Voltage [V] | 42.99-43.71 |
Maximum Power Point Current [A] | 13.26-13.50 |
Weight per pc. [kg] | 26.5 (±0.5) |
Thickness [mm] | 35(±1) |
Dimension L*W*H [mm] | 2279*1134*35(±1) |
Maximum System Voltage [V] | 1,500 |
Maximum Fuse Rating [A] | 25 |
Chip type | Mono N-TOPCon |
Front cover glass | 3.2mm high light transmittance, low iron, tempered glass |
Juntion Box | IP68, three bypass diodes |
Maximum positive static load [Pa[] | 5400 |
Operating temperrature [℃] | -40 to +85 |
NOCT | 45℃ |
Peak power (Pmpp)temperature coefficient | 0.29%/℃ |
Open Circuit Voltage [Voc] temperature coefficient | 0.25%/℃ |
Short Circuit Current [Isc] temperature coefficent | 0.045%/℃ |
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